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| to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SA844 transistor (pnp) features z high dc current gain z low frequency amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-0.01ma,i e =0 -55 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -55 v emitter-base breakdown voltage v (br)ebo i e =-0.01ma,i c =0 -5 v collector cut-off current i cbo v cb =-18v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-2v,i c =0 -0.05 a dc current gain h fe v ce =-12v, i c =-2ma 160 800 collector-emitter saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.5 v base-emitter voltage v be v ce =-12v, i c =-2ma -0.75 v collector output capacitance c ob v ce =-10v,i c =0, f=1mhz 2 pf transition frequency f t v ce =-12v,i c =-2ma 200 mhz classification of h fe rank c d e range 160-320 250-500 400-800 symbol parameter value unit v cbo collector-base voltage -55 v v ceo collector-emitter voltage -55 v v ebo emitter-base voltage -5 v i c collector current -0.1 a p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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